The relationship between doping concentration and conductivity in a semiconducting material used in electronic devices is directly proportional. Doping is the process of intentionally introducing impurities into a semiconductor material to modify its electrical properties. These impurities can be either electron donors n-type doping or electron acceptors p-type doping .As the doping concentration increases, the number of free charge carriers electrons or holes in the semiconductor material also increases. This results in a higher conductivity of the material, as more charge carriers are available to participate in the conduction process.The conductivity of a doped semiconductor can be expressed as: = q * n * n + p * p where q is the elementary charge, n and p are the concentrations of electrons and holes, respectively, and n and p are the mobilities of electrons and holes, respectively.From this equation, it is evident that as the doping concentration n or p increases, the conductivity of the material also increases. This relationship is crucial in designing electronic devices, as it allows for the control of the electrical properties of semiconducting materials by adjusting the doping concentration.