The addition of boron and nitrogen atoms to graphene, a process known as doping, can significantly alter its properties. Graphene is a single layer of carbon atoms arranged in a hexagonal lattice, and it exhibits remarkable electronic, mechanical, and thermal properties. By introducing boron B and nitrogen N atoms into the lattice, the electronic properties of graphene can be tuned, which can lead to improved performance in electronic devices.1. Bandgap opening: Pristine graphene is a zero-bandgap semiconductor, which means it does not have a bandgap between its valence and conduction bands. This property limits its application in digital electronics, where an on-off switching behavior is required. Doping graphene with boron and nitrogen atoms can open up a bandgap, making it a more suitable material for transistors and other electronic components.2. Charge carrier concentration: Introducing boron and nitrogen atoms into the graphene lattice can change the charge carrier concentration. Boron acts as a p-type dopant, introducing holes positive charge carriers into the lattice, while nitrogen acts as an n-type dopant, introducing electrons negative charge carriers . This allows for better control over the electronic properties of graphene, which can be beneficial for designing electronic devices with specific performance characteristics.3. Enhanced chemical reactivity: The presence of boron and nitrogen atoms in the graphene lattice can increase its chemical reactivity, making it more suitable for use in sensors and other devices that rely on chemical interactions.4. Improved mechanical properties: Doping graphene with boron and nitrogen can also improve its mechanical properties, such as strength and toughness, which can be useful for applications in flexible electronics and other areas where mechanical stability is important.By understanding and exploiting these changes in properties, researchers can design electronic devices with improved performance using doped graphene. For example, graphene-based transistors with tunable bandgaps can be used to create more energy-efficient and faster electronic devices. Additionally, doped graphene can be used in sensors, batteries, and other applications where its enhanced reactivity and mechanical properties are advantageous. Overall, the addition of boron and nitrogen atoms to graphene opens up new possibilities for the development of advanced electronic devices and materials.