Doping a graphene sheet with boron and nitrogen atoms can significantly alter its electronic properties, including its band gap. Graphene, a single layer of carbon atoms arranged in a hexagonal lattice, is a zero-band gap semiconductor with excellent electrical conductivity. However, the absence of a band gap limits its applicability in electronic devices, such as transistors and sensors.Density Functional Theory DFT calculations can be employed to study the effect of doping graphene with boron B and nitrogen N atoms on its electronic properties. DFT is a computational quantum mechanical modeling method used to investigate the electronic structure of many-body systems, including atoms, molecules, and solids.When boron and nitrogen atoms are introduced into the graphene lattice, they replace carbon atoms and form covalent bonds with the neighboring carbon atoms. Boron has one less electron than carbon, while nitrogen has one more electron than carbon. This difference in electron count modifies the electronic structure of the doped graphene.Boron doping p-type doping introduces holes into the graphene lattice, while nitrogen doping n-type doping introduces extra electrons. These dopants create localized states near the Fermi level, which can lead to the opening of a band gap in the electronic structure of graphene. The size of the band gap depends on the concentration and distribution of the dopants.DFT calculations can provide insights into the electronic structure of doped graphene, including the band gap, density of states, and charge distribution. These calculations can help optimize the doping process to achieve the desired electronic properties for specific applications.In summary, doping a graphene sheet with boron and nitrogen atoms can open a band gap in its electronic structure, making it more suitable for electronic device applications. DFT calculations can be used to study the effect of doping on the electronic properties of graphene and guide the optimization of the doping process.